SSG4407PE Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Mode Power MOSFET

Elektronische Bauelemente
SSG4407PE
-15 A, -30 V, R_DS(ON) 9 mΩ
P-Channel Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low R_DS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
PACKAGE INFORMATION
S
D
Package
MPQ
Leader Size
S
D
SOP-8
2.5K
13’ inch
ESD
Protection
S
D
Diode
G
D
MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA = 25°C
ID
TA = 70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Total Power Dissipation ¹
TA = 25°C
PD
TA = 70°C
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.) ¹
t≦5 sec
RθJC
Thermal Resistance Junction-Ambient (Max.) ¹
t≦5 sec
RθJA
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings
-30
±20
-15
-11
±50
-2.1
3.1
2.3
-55 ~ 150
25
50
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
11-Oct-2012 Rev. A
Any changes of specification will not be informed individually.
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