SSG4407P Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – -15A, -30V, RDS(ON) 9 m
P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4407P
-15A, -30V, R_DS(ON) 9 mΩ
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize High Cell Density process. Low R_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry.
FEATURES
Low R_DS(on) provides higher efficiency and
extends battery life
Miniature SO-8 Surface Mount Package Saves Board Space
High power and current handling capability
Extended VGS range (±25) for battery pack applications
APPLICATION
PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Total Power Dissipation ¹
TA=25°C
PD
TA=70°C
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.) ¹
t≦5 sec
RθJC
Thermal Resistance Junction-Ambient (Max.) ¹ t≦5 sec
RθJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
-30
±25
-15
-11
±50
-2.1
3.1
2.3
-55 ~ 150
25
50
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4