SSG4407J Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4407J
-12A, -30V, R_DS(ON) 13 mΩ
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG4407J uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltages as low as 2.5V. The device is
suitable for use as a load switch or in PWM applications.
It may be used in a common drain arrangement to from a
bidirectional blocking switch.
FEATURES
Simple Drive Requirement
Lower On-resistance
Low Gate Charge
MARKING
Q4407
Date Code
SOP-8
LD
M
AC
J^K
H
G
B
FE
Dimensions in millimeters
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.700 5.10
3.80 4.00
0°
8°
0.40 1.27
0.17 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy ¹
Total Power Dissipation
Thermal Resistance Junction-Ambient
Lead Temperature for Soldering Purposes@1/8’’ from case for 10s
Operating Junction & Storage Temperature Range
Notes:
1. Test condition: VDD= -50V, L=0.5mH, RG=25Ω, Starting TJ=25°C
Symbol
VDS
VGS
ID
IDM
EAS
PD
RθJA
TL
TJ, TSTG
Rating
-30
±20
-12
-48
115
1.4
89
260
150, -55 ~ 150
Unit
V
V
A
A
mJ
W
°C / W
°C
°C
http://www.SeCoSGmbH.com/
10-Feb-2017 Rev. C
Any changes of specification will not be informed individually.
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