SSG4406J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4406J
10A, 30V, R_DS(ON) 12mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
SSG4406J uses advanced trench technology to
provide excellent R_DS(on) with low gate charge. This
device is suitable for high side switch in SMPS and
general purpose applications.
SOP-8
B
FEATURES
High side switch in SMPS
Load switch
MARKING
Q4406
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.700 5.10
3.80 4.00
0°
8°
0.40 1.27
0.17 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Energy ¹
EAS
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Lead Temperature for Soldering Purposes@1/8’’
form case for 10s
TL
Junction & Storage Temperature Range
TJ,TSTG
Notes:
1. EAS condition : VDD=50V, L=0.5mH, RG=25Ω, starting TJ=25°C.
Rating
30
±20
10
40
105
1.4
89
260
-55~150
Unit
V
V
A
A
mJ
W
°C/ W
°C
°C
http://www.SeCoSGmbH.com/
13-Jul-2017 Rev. C
Any changes of specification will not be informed individually.
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