SSG4403_09 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4403
P-Ch Enhancement Mode Power MOSFET
-6.1 A, -30 V, R_DS(ON) 50 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOP-8
DESCRIPTION
The SSG4403 uses advanced trench technology
to provide excellent on-resistance, low gate charge and
operation with gate voltages as low as 2.5V.
The device is suitable for use as a load switch or
in PWM applications.
FEATURES
Low Gate Charge
Lower On-resistance
Fast Switching Characteristic
PACKAGE DIMENSIONS
DD D D
8765
4403SC
= Date Code
Gate
123 4
SS SG
ABSOLUTE MAXIMUM RATINGS
Drain
Source
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
VGS
ID @Ta=25℃
ID @Ta=70℃
IDM
PD @Ta=25℃
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Junction-ambient³
THERMAL DATA
Max.
Rθj-amb
RATINGS
-30
±12
-6.1
-5.1
-60
2.5
0.02
-55 ~ +150
50
UNIT
V
V
A
A
A
W
W/℃
℃
℃/W
P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V VGS=0, ID=-250µA
Gate Threshold Voltage
VGS(th)
-0.7
-
-1.3
V VDS=VGS, ID=-250µA
Forward Transconductance
gfs
-
11
-
S VDS=-5V, ID=-5A
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current(Tj=25℃)
Drain-Source Leakage Current(Tj=55℃)
IDSS
-
-
±100 nA VGS= ±12V
-
-
-1
µA VDS=-30V, VGS=0
-
-
-5
µA VDS=-24V, VGS=0
Static Drain-Source On-Resistance²
-
RDS(ON)
-
-
50
VGS=-10V, ID=-6.1A
-
61
mΩ V_GS=-4.5V, I_D=-5A
Total Gate Charge²
-
-
117
Qg
-
9.4
-
VGS=-2.5 V, ID=-1 A
ID=-5 A
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time²
Qgs
Qgd
Td(on)
-
2
-
nC V_DS=-15 V
-
3
-
VGS=-4.5 V
-
7.6
-
VDS=-15 V
Rise Time
Turn-off Delay Time
Fall Time
Tr
Td(off)
Tf
-
-
8.6
-
44.7
-
ns
ID=-10 V
RG=6 Ω
-
16.5
-
RL=2.4 Ω
Input Capacitance
Ciss
-
940
-
VGS=0 V
Output Capacitance
Coss
-
104
-
pF VDS=-15 V
Reverse Transfer Capacitance
Crss
-
73
-
f=1.0 MHz
SOURCE-DRAIN DIODE
Forward On Voltage²
VSD
-
-
-1.0
V IS=-1A, VGS=0 V
Continuous Source Current (Body Diode)
IS
Reverse Recovery Time²
Trr
-
-
-4.2 A
-
22.7
-
ns IS = -5A, VGS = 0V,
Reverse Recovery Charge
Qrr
-
15.9
-
nC dl/dt = 100A/µs
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface Mounted on 1 in² copper pad of FR4 board; 125 °C/W when mounted on Min. copper pad.
29-Oct-2009 Rev. B
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