SSG4403 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4403
P-Ch Enhancement Mode Power MOSFET
-6.1 A, -30 V, R_DS(ON) 50 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation
with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications.
FEATURES
z Low Gate Charge
z Lower On-resistance
z Fast Switching Characteristic
PACKAGE DIMENSIONS
SOP-8
0.40
0.90
6.20
5.80
0.25
0.19
0.25
o
45 _{0.375 REF}
3.80
4.00
0.35
1.27Typ.
0.49
4.80
0.100.25
5.00
1.35
o
0
1.75
o
8
Dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
V_GS
I_D @Ta=25℃
I_D @Ta=70℃
I_DM
Total Power Dissipation
P_D @Ta=25℃
Operating Junction and Storage Temperature Range Tj, Tstg
Linear Derating Factor
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rθj-amb
Ratings
-30
±12
-6.1
-5.1
-60
2.5
-55 ~ +150
0.02
Value
50
Unit
V
V
A
A
A
W
℃
W/℃
Unit
℃/W
01-June-2005 Rev. A
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