SSG4396N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4396N
4.4A, 150V, R_DS(ON) 110mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R_DS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low R_DS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13’ inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
VDS
150
VGS
±20
Continuous Drain Current ¹
TA = 25°C
4.4
ID
TA = 70°C
3.7
Pulsed Drain Current ²
IDM
20
Continuous Source Current (Diode Conduction) ¹
IS
4.6
Total Power Dissipation ¹
TA = 25°C
3.1
PD
TA = 70°C
2.2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 ~ 150
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient ¹
t ≦ 10 sec
RθJA
40
Steady State
80
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
13-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
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