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| SSG4228_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4228
6.8A, 30V, RDS(ON) 26mï
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
The SSG4228 provide the designer with the best
Combination of fast switching, ruggedized device design,
Ultra low on-resistance and cost-effectiveness.
SOP-8
B
FEATURES
ï¬ Low on-resistance
ï¬ Simple Drive Requirement
ï¬ Double-N MosFET Package
MARKING CODE
4228SS
ï£ï£ï£ï£ï
ï½ï
ï£ = Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
LeaderSize
13â inch
A
H
G
LD
M
C
N
JK
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
G
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current 3
Pulsed Drain Current 1
Power Dissipation 1
Maximum Junction to Ambient 3
TA = 25°C
TA = 70°C
ID
IDM
PD
RθJA
6.8
5.5
40
2
62.5
Linear Derating Factor
0.016
Operating Junction & Storage Temperature Range
TJ, TSTG
-55~150
Unit
V
V
A
A
W
°C / W
W / °C
°C
http://www.SeCoSGmbH.com/
18-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
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