SSG3110 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual- Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG3110
2.2A, 100V, R_{DS(O )} 310 mΩ
Dual- Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG3110 is the highest performance trench dual N-ch MOSFETs
with extreme high cell density, which provides excellent R_DS(ON) and
gate charge for most synchronous buck converter applications.
SOP-8
B
FEATURES
Advanced high cell density Trench technology
Super low gate charge
Excellent CdV/dt effect decline
Green Device Available
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.70 5.10
3.80 4.00
0°
8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@ VGS=10V ¹
Pulsed Drain Current ³
TA=25°C
TA=70°C
Power Dissipation@ TA=25°C
Maximum Thermal Resistance from Junction to Ambient ¹
Maximum Thermal Resistance from Junction to Ambient
Maximum Thermal Resistance from Junction to Case ¹
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RθJA
RθJC
TJ, TSTG
S
G
S
G
Rating
100
±20
2.2
1.5
5.5
1.5
83
135
50
-55~150
D
D
D
D
Unit
V
V
A
A
W
°C / W
°C / W
°C
http://www.SeCoSGmbH.com/
02-Sep-2016 Rev. A
Any changes of specification will not be informed individually.
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