SSG2601_15 Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG2601
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.3 A, 20 V, R_DS(ON) 25 mΩ
P-Ch: -5.3A, -20 V, R_DS(ON) 75 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG2601 provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching Performance
MARKING
2601SS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13 inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S1
D1
G1
D1
S2
D2
G2
D2
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current¹, VGS@4.5V ^TA=25°C
ID
TA=70°C
Pulsed Drain Current²
IDM
Total Power Dissipation³
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Junction-ambient¹
Thermal Resistance Junction-case¹
Thermal Data
Max.
R_θJA
Max.
R_θJC
Ratings
N-Ch
P-Ch
20
-20
±12
±12
6.3
-5.3
4.9
-4
25
-23
1.5
-55~150
85
40
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
10-Jun-2014 Rev. A
Any changes of specification will not be informed individually.
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