SSG1A6P15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG1A6P15
-1.6A, -150V, R_{DS(O )} 780mΩ
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG1A6P15 is the highest performance
trench P-ch MOSFETs with extreme high cell
density , which provide excellent R_DS(ON) and
gate charge for most of the synchronous buck
converter applications .
The SSG1A6P15 meet the RoHS and Green
Product requirement with full function reliability
approved.
FEATURES
Advanced High Cell Density Trench Technology
Super Low Gate Charge
Green Device Available
MARKING
1A6P15
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13’ inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.70 5.10
3.80 4.00
0°
8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V ¹
TA =25°C
ID
TA =70°C
Pulsed Drain Current ²
IDM
Total Power Dissipation
TA =25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient ¹
RθJA
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case ¹
RθJC
Ratings
-150
±20
-1.6
-1.3
-6.4
3
-55 ~ 150
t≦10sec, 42
Steady State, 105
125
30
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Apr-2017 Rev. A
Any changes of specification will not be informed individually.
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