SSG14N10SG Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG14 10SG
14A, 100V, R_{DS(O )} 8.5mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSG14N10SG is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent R_DS(ON) and gate charge for most of the
synchronous buck converter applications.
The SSG14N10SG meet the RoHS and Green Product with
Function reliability approved.
FEATURES
R_DS(on)≦8.5mΩ @V_GS=10V
R_DS(on)≦10.5mΩ @V_GS=4.5V
High speed power switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
SOP-8 Package
MARKING
14N10SG
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.700 5.10
3.80 4.00
0°
8°
0.40 1.27
0.17 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current (Silicon Limited)
ID
TC=100°C
Pulsed Drain Current
IDM
Avalanche Energy, Single Pulse, @L=0.1mH TC=25°C
EAS
Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
RθJA
Maximum Thermal Resistance Junction-Lead
RθJL
Ratings
100
±20
14
8.9
80
80
3.1
-55 ~ 150
t≦10sec, 40
Steady State, 75
23
Unit
V
V
A
A
mJ
W
°C
°C / W
http://www.SeCoSGmbH.com/
29-Jun-2017 Rev. A
Any changes of specification will not be informed individually.
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