SSG10N03 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG10N03
10A , 30V , R_DS(ON) 9mΩ
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSG10N03 is the highest performance trench
N-ch MOSFETs with extreme high cell density, which provide
excellent R_DS(on) and gate charge for most of the synchronous
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
MARKING
10N03SS
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
G
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
VGS=10V, TA=25°C
ID
VGS=10V, TA=70°C
Pulsed Drain Current ²
IDM
Total Power Dissipation @ TA=25°C ⁴
PD
Single Pulse Avalanche Energy ³
EAS
Single Pulse Avalanche Current
IAS
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient ¹
RθJA
Maximum Thermal Resistance Junction-Case ¹
RθJC
Rating
30
±20
10
7
52
1.5
130
34
-55~150
85
50
Unit
V
V
A
A
A
W
mJ
A
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
30-Sep-2015 Rev. A
Any changes of specification will not be informed individually.
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