SSG07N10J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG07N10J
7A , 100V , R_DS(ON) 28mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
SSG07N10J is the highest performance trench N-ch
MOSFETs with extreme high cell density, which provide
excellent R_DS(on) and gate charge for most of the synchronous
buck converter applications. 100% EAS guaranteed with full
function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
MARKING
Q07N10
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.700 5.10
3.80 4.00
0°
8°
0.40 1.27
0.17 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Energy ¹
EAS
Total Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Lead Temperature for Soldering Purposes@1/8’’ form case for 10s
TL
Junction and Storage Temperature Range
Notes:
1. EAS condition: VDD=25V,L=0.1mH,RG=25Ω,Starting TJ=25°C.
TJ, TSTG
Rating
100
±20
7
28
16
1.4
89
260
150, -55~150
Unit
V
V
A
A
mJ
W
°C/ W
°C
°C
http://www.SeCoSGmbH.com/
10-Feb-2017 Rev. B
Any changes of specification will not be informed individually.
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