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| SSG05N10J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG05N10J
5A , 100V , RDS(ON) 140mâ¦
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen free
DESCRIPTION
SSG05N10J uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge. This device is
suitable for the use in a wide variety of applications.
SOP-8
B
FEATURES
Special processing technology for high ESD capability
High density cell design for ultra low RDS(on)
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
APPLICATIONS
Power switching application
Hard switching and high frequency circuits
Uninterruptible power supply
MARKING
Q05N10
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
LD
M
A
H
G
C
N
JK
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.700 5.10
3.80 4.00
0°
8°
0.40 1.27
0.17 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
S
D
G
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current 1
IDM
Power Dissipation 1
PD
Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient 2
RθJA
Rating
100
±20
5
24
1.4
150, -55~150
89
Unit
V
V
A
A
W
°C
°C/ W
http://www.SeCoSGmbH.com/
10-Feb-2017 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3
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