SSG04N15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG04 15
4.5A, 150V, R_{DS(O )} 70 mΩ
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG04N15 is the highest performance trench
N-ch MOSFETs with extreme high cell density, which
provides excellent R_DS(ON) and gate charge for most
synchronous buck converter applications.
The SSG04N15 meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology
Super low gate charge
Green device available
MARKING
04N15
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.70 5.10
3.80 4.00
0°
8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹ @VGS=10V
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Power Dissipation ¹ @TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient ¹
RθJA
Maximum Thermal Resistance from Junction to Ambient
Maximum Thermal Resistance from Junction to Case ¹
RθJC
Rating
150
±25
4.5
3.6
20
3.1
-55~150
t≦10s, 40
Steady state, 85
125
25
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
16-Mar-2017 Rev. A
Any changes of specification will not be informed individually.
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