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| SSG0410_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG0410
N-Ch Enhancement Mode Power MOSFET
3.8 A, 100 V, RDS(ON) 158 mï
DESCRIPTION
The SSG0410 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
ï¬ Simple Drive Requirement
ï¬ Low Gate Charge
ï¬ Fast Switching Characteristic
SOP-8
B
MARKING
DD D D
876 5
0410SC
ï£ï£ï£ï£ï
ï½ï
123 4
SS SG
ï£ = Date Code
Drain
ï®ï¯ï°ï±
ïï
Gate
ïªï«ï¬ï
Source
A
H
G
LD
M
C
N
JK
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 3
Pulsed Drain Current 1
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-ambient 3 (Max.)
RθJA
RATINGS
100
±20
3.8
3.0
8
2.5
0.02
-55 ~ 150
50
UNIT
V
V
A
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
01-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
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