SSE90N10-14 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SSE90N10-14
90A , 100V , R_DS(ON) 16m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R_DS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
 Low R_DS(on) provides higher efficiency and
extends battery life.
 Low thermal impedance copper leadframe
TO-220P saves board space.
 Fast Switch Speed.
 High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
N-Channel
D₂
G₁
S₃
TO-220P
D
C
B
E
A
R
T
S
G
F
I
H
J
K
L
U
X
M
P
N
O
V
Q
Q
W
123
REF.
A
B
C
D
E
F
G
H
I
J
K
L
Millimeter
Min. Max.
7.90 8.10
9.45 9.65
9.87 10.47
-
11.50
1.06 1.46
2.60 3.00
6.30 6.70
8.35 8.75
14.7 15.3
1.60 Typ.
1.10 1.30
1.17 1.37
REF.
M
N
O
P
Q
R
S
T
U
V
W
X
Millimeter
Min. Max.
-
1.50
0.75 0.95
0.66 0.86
13.50 14.50
2.44 3.44
3.50 3.70
1.15 1.45
4.30 4.70
-
2.7
1.89 3.09
0.40 0.60
2.60 3.60
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
T_C=25°C
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
T_C=25°C
Operating Junction and Storage Temperature Range
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
Maximum Junction to Ambient ¹
Thermal Resistance Rating
R_θJA
Maximum Junction to Case
Notes:
1 Package Limited.
2 Pulse width limited by maximum junction temperature.
R_θJC
Ratings
100
±20
90
240
90
300
-55~175
62.5
0.5
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
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