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| SS8550W_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor | |||
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Elektronische Bauelemente
SS8550W
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
Power dissipation
PCM : 0.2 W
Collector Current
ICM : -1.5 A
Collector-base voltage
V(BR)CBO : - 40 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150O C
V
3
1
2
A
L
3
Top View
1
2
G
Collector
3
1
Base
2
Emitter
BS
Marking : Y2
C
D
H
K
J
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 100È°AÄ IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-0.1mAÄ IB=0
-25
Emitter-base breakdown voltage
V(BR)EBO
IE=-100È°AÄIC=0
-5
Collector cut-off current
ICBO
VCB=-40 V , IE=0
Collector cut-off current
ICEO
VCE=-20V , IB=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
DC current gain
HFE(1)
VCE=-1V, IC=-100m A
120
HFE(2)
VCE=-1V, IC=-800mA
40
Collector-emitter saturation voltage
VCE(sat) IC=-800 mA, IB= -80m A
Base-emitter saturation voltage
Transition frequency
output capacitance
VBE(sat) IC=-800 mA, IB= -80m A
fT
VCE=-10V, IC=-50mA
f=30MHz
100
&RE
(VCB=-10V,IE=0,f=1MHz)
MAX UNIT
V
V
V
-0.1 È°A
-0.1 È°A
-0.1 È°A
350
-0.5
V
-1.2
V
MHz
20
S)
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
H
200-350
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
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