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| SS8050W Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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Elektronische Bauelemente
SS8050W
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
Power dissipation
PCM : 0.2 W
Collector Current
ICM : 1.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150O C
V
3
1
2
A
L
3
Top View
1
2
G
Collector
3
1
Base
2
Emitter
BS
C
D
H
K
J
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100È°AÄ IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 0.1mAÄ IB=0
25
Emitter-base breakdown voltage
V(BR)EBO
IE=100È°AÄ IC=0
5
Collector cut-off current
ICBO
VCB=40 V , IE=0
0.1
Collector cut-off current
ICEO
VCE=20V , IB=0
0.1
Emitter cut-off current
IEBO
VEB= 5V , IC=0
0.1
DC current gain
HFE(1)
VCE=1V, IC= 50m A
120
350
HFE(2)
VCE=1V, IC=500mA
40
Collector-emitter saturation voltage
VCE(sat) IC=500 mA, IB= 50m A
0.5
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
Marking : Y1
VBE(sat) IC=500 mA, IB= 50m A
1.2
VCE=6V, IC= 20mA
fT
100
f=30MHz
L
120-200
H
200-350
UNIT
V
V
V
È°A
È°A
È°A
V
V
MHz
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
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