SS8050T_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
SS8050T
NPN Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
Power dissipation
PCM : 1 W
Collector Current
ICM : 1.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating & storage junction temperature
Tj, Tstg : - 55^OC ~ + 150^O C
1
2
3
1
2
3
1 23
1. EMITTER
2. BASS
3 . COLLECTOR
ELECTRICAL CHARACTERISTICS ( Tamp.=25^OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 100ȰAđ IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 0.1mAđ IB=0
25
Emitter-base breakdown voltage
V(BR)EBO
IE=100ȰAđ IC=0
5
Collector cut-off current
ICBO
VCB=40 V , IE=0
Collector cut-off current
ICEO
VCE=20V , IB=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
DC current gain
HFE(1)
VCE=1V, IC= 100m A
85
HFE(2)
VCE=1V, IC= 800mA
40
Collector-emitter saturation voltage
VCE(sat) IC=800 mA, IB= 80m A
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF h_FE(1)
Rank
B
Range
85-160
VBE(sat) IC=800 mA, IB= 80m A
VCE=10V, IC= 50mA
fT
100
f=30MHz
C
120-200
D
160-300
MAX UNIT
V
V
V
0.1 È°A
0.1 È°A
0.1 È°A
400
0.5
V
1.2
V
MHz
E
300-400
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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