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SS8050 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (NPN)
Elektronische Bauelemente
SS8050
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
 Complimentary to SS8550
 Power Dissipation
PCM : 0.3W
 Collector Current
ICM : 1.5A
 Collector - Base Voltage
V(BR)CBO : 40V
 Operating & Storage junction temperature
TJ, TSTG : -55℃ ~ +150℃
MARKING : Y1

Base
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissapation
Junction, Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Collector


Emitter
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
RATINGS
40
25
5
1.5
0.3
150, -55~150
UNIT
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
TEST CONDITIONS
IC =100µA, IE =0
IC =0.1mA, IB =0
IE =100µA, IC =0
VCB =40V, IE =0
VCB =20V, IE =0
VEB =5V, IC =0
VCE =1V, IC =100mA
VCE =1V, IC =800mA
IC =800mA, IB =80mA
IC =800mA, IB =80mA
VCE =10V, IC=50mA,f=30MHz
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
FT
MIN.
40
25
5
120
40
100
MAX.
0.1
0.1
0.1
400
UNIT
V
V
V
µA
µA
µA
0.5
V
1.2
V
MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
L
120-200
H
200-350
Y1
J
300-400
http://www.SeCoSGmbH.com/
26-Oct-2009 Rev. C
Any changes of specification will not be informed individually.
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