SR2020 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 20.0 AMPS. Schottky Barrier Rectifiers

SR2020 THRU SR20100
Elektronische Bauelemente
VOLTAGE 20V ~ 100V
20.0AMP Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Epitaxial construction
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity: As Marked
* Mounting position: Any
* Weight: 2.24 grams
.108
(2.75)
T O -220
.412
(10.5)
MAX.
3.8 f +.2
HOLE THRU
12 3
.248
(6.3) _.595
(15.1)
MAX.
.180
(4.6)
.051 _MAX.
(1.3)
.040 _MAX.
(1.0)
.100
(2.54)
.550
.158 ^(14.0)
(4.0) ^MIN.
MAX.
.120
(3.05)
PIN 1
PIN 3
CASE
PIN 2
Dimens ions in millimeters
.050
(1.27)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature unless otherwise speci.fied
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 10.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
T a=100 C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance Rθ JC (Note 2)
Operating Temperature Range TJ
Storage Temperature Range TSTG
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Case.
SR2020
20
20
20
SR2030
30
30
30
SR2040
40
40
40
SR2050
50
50
50
SR2060 SR2080
60
80
60
80
60
80
SR20100 UNITS
100 V
100 V
100 V
20
A
150
0.54
0.5
45
700
0.64
0.3
22.5
460
3. 0
-50 ~ +150
-65 ~ +175
125
0.79
0.2
7.5
280
A
V
mA
mA
pF
C /W
C
C
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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