SPR85N80SG Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SPR85 80SG
85A, 80V, R_{DS(O )} 8mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SPR85N80SG is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent R_DS(ON) and gate charge for most of the
synchronous buck converter applications.
The SPR85N80SG meet the RoHS and Green Product with
Function reliability approved.
PR-8PP
FEATURES
R_DS(on)≦8mΩ @V_GS=10V
R_DS(on)≦11.1mΩ @V_GS=4.5V
High speed power switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
PR-8PP Package
MARKING
85N80SG
Date Code
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.9
5.1
5.7
5.9
5.95 6.2
1.27 BSC.
0.35 0.49
0.1
0.2
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
0.8
1.0
0.254 Ref.
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size
13 inch
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current (Silicon Limited)
TC=100°C
ID
Continuous Drain Current (Package Limited) TC=25°C
Pulsed Drain Current
IDM
Avalanche Energy, Single Pulse, @L=0.1mH TC=25°C
EAS
Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
S
S
S
G
Ratings
80
±20
85
60
70
200
20
125
-55 ~ 150
55
1.5
D
D
D
D
Unit
V
V
A
A
mJ
W
°C
°C / W
http://www.SeCoSGmbH.com/
29-Jun-2017 Rev. A
Any changes of specification will not be informed individually.
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