SPR4A6N15-C Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SPR4A6 15-C
4.6A , 150V , R_{DS(O )} 160 mΩ
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR4A6N15-C is the highest performance
trench N-ch MOSFETs with extreme high cell density,
which provide excellent R_DS(ON) and gate charge for
most of the synchronous buck converter applications.
The SPR4A6N15-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Technology
Super Low Gate Charge
Green Device Available
MARKING
PR-8PP
B
D
C
θ
eE
A
d
b
g
4A6N15
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
S
Leader Size S
13 inch
S
G
F
G
D
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 0.9 1.1 θ 0° 12°
D
B 4.9 5.1 b 0.33 0.51
C 0.2 0.3 d
1.27 BSC
D
D 3.81 4
e 5.7 5.9
E 5.95 6.2 g 1.1 1.4
D
F 0.1 0.2
G 3.81 4
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
±20
Continuous Drain Current ¹@VGS=10V ^TA=25°C
ID
4.6
TA=70°C
3.7
Pulsed Drain Current ³
IDM
16
TA=25°C
5
Total Power Dissipation
PD
TA=70°C
3.2
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Rating
-55~150
Thermal Resistance Junction-Ambient ¹
Thermal Resistance Junction-Ambient ²
Thermal Resistance Junction-Case ¹
RθJA
RθJC
t≦10s, 25
Steady State, 62
125
3.1
Unit
V
V
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
17-Jul-2017 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4