SPR14P10 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SPR14P10
-14A , -100V , R_{DS(O )} 90 mΩ
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR14P10 is the highest performance
trench P-ch MOSFETs with extreme high cell density,
which provide excellent R_DS(ON) and gate charge for
most of the synchronous buck converter applications.
The SPR14P10 meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
R_DS(on)≦90mΩ @V_GS= -10V
R_DS(on)≦110mΩ @V_GS= -4.5V
Advanced High Cell Density Technology
Super Low Gate Charge
Green Device Available
MARKING
14P10
= Date code
PR-8PP
B
D
C
θ
eE
A
d
b
g
F
G
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.9 1.1
4.9 5.1
0.2 0.3
3.81 4
5.95 6.2
0.1 0.2
3.81 4
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 12°
0.33 0.51
1.27 BSC
5.7 5.9
1.1 1.4
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-100
Gate-Source Voltage
VGS
±20
Continuous Drain Current ¹@VGS=10V ^TC=25°C
ID
-14
TC=100°C
-10
Pulsed Drain Current ²
IDM
-56
Total Power Dissipation ¹
TC=25°C
PD
42
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Rating
-55~175
Thermal Resistance Junction-Ambient ¹ (Max).
RθJA
t≦10s, 50
Steady State, 83
Thermal Resistance Junction-Ambient (Max).
125
Thermal Resistance Junction-Case ¹ (Max).
RθJC
3.6
Unit
V
V
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
01-Jun-2017 Rev. A
Any changes of specification will not be informed individually.
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