SMS8820 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMS8820
7A , 20V , R_DS(ON) 21 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SMS8820 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD-protected.
This device is suitable for the use as a uni-directional or
bi-directional load switch, facilitated by its common-drain
configuration.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
8820
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.17
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.35 0.65
0.08 0.20
0.6 REF.
0.95 BSC.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current ¹
IDM
Thermal Resistance from Junction to Ambient
RθJA
Junction and Storage Temperature Range
TJ, TSTG
Lead Temperature for Soldering Purposes@1/8’’
from case for 10s
TL
Notes:
1. Repetitive rating：Pulse width limited by the junction temperature.
Rating
20
±12
7
25
417
150, -55~150
260
Unit
V
V
A
A
°C / W
°C
°C
http://www.SeCoSGmbH.com/
25-Nov-2015 Rev.A
Any changes of specification will not be informed individually.
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