SMS7401 Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMS7401
-2.8A, -30V,RDS(ON) 115m
P-Channel Enhancement Mode Power Mos.FET
Description
RoHS Compliant Product
The SMS7401 is the P-channel logic enhancement mode
A
power field effect transistors are produced using high
L
cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
S
3
Top View
B
voltage application such as cellular phone and notebook
1
2
computer power management and other battery powered
circuits where high-side switching, and low in-line power
D
loss are needed in a very small outline surface mount
G
package.
C
Features
H
K
* -30V/-2.8A,RDS(ON)=115m
* -30V/-2.5A,RDS(ON)=125m
* -30V/-1.5A,RDS(ON)=170m
* -30V/-1.0A,RDS(ON)=240m
@VGS=-10V
@VGS=-4.5V
@VGS=-2.5V
@VGS=-1.8V
Drain
Gate
Source
* Super High Density Cell Design For
Extremely Low RDS(ON)
* Exceptional On-Resistance And Max. DC
Current Capability
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
D
Applications
* DC/DC Converter
* Power Management in Notebook
* DSC
* LCD Display Inverter
* Portable Equipment
* Battery Powered System
* Load Switch
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@TJ =150 ^oC
Drain-Source Diode Forward Current
Pulsed Drain Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient
G
S
*week code: A~Z(1~26),a~z(27~52)
Symbol
VDS
VGS
ID@TA= 25 ^oC
ID@TA= 70 ^oC
IS
IDM
PD@TA=25 ^oC
PD@TA=70 ^oC
Tj, Tstg
Symbol
Rthj-a
Ratings
-30
±12
-2.8
-2.1
-1.4
-8
0.33
0.21
-55~+150
Ratings
105
Unit
V
V
A
A
A
W
o_C
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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