SMS501DE_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMS501DE
0.03A , 600V , R_DS(ON) 700Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SMS501DE is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R_DS(on) and gate charge for most of the synchronous
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
MARKING
501DE
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.35 0.65
0.08 0.20
0.6 REF.
0.95 BSC.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±20
Continuous Drain Current
TC=25°C
ID
TC=100°C
0.03
0.024
Pulsed Drain Current
IDM
0.12
Total Power Dissipation
TC=25°C
PD
Derate above 25°C
0.5
0.004
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
RθJA
250
Maximum Thermal Resistance Junction-Case
RθJC
50
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
28-Oct-2013 Rev. A
Any changes of specification will not be informed individually.
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