SMS4003K_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel MOSFET

Elektronische Bauelemente
SMS4003K
0.5 A, 30V
N-Channel MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
FEATURES
Low gate voltage threshold V_GS(TH) to facilitate drive circuit design
Low gate charge for fast switching
ESD protected gate
Minimum breakdown voltage rating of 30V
APPLICATION
Level shifters
Level switches
Low side load switches
Portable applications
DEVICE MARKING: TR8
3 DRAIN
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
1
GATE _*
* Gate
Pretection
Diode
SOURCE 2
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Drain – Source Voltage
VDS
Gate – Source Voltage
VGS
Continuous Drain Current¹, Steady TA=25°C
State
TA=85°C
ID
Power Dissipation¹, Steady State
PD
Continuous Drain Current¹ , t<10s ^TA=25°C
TA=85°C
ID
Power Dissipation¹, t<5s
PD
Pulsed Drain Current
IDM
Steady State¹
Maximum Junction – Ambient
t<10s¹
RθJA
Steady State²
30
±20
0.5
0.37
0.69
0.56
0.40
0.83
1.7
180
150
300
Operating Junction & Storage Temperature Range
Source Current (Body Diode)
Lead Temperature for Soldering Purposes(1/8” from
case 10s
TJ, TSTG
IS
TL
150, -55~150
1.0
260
Note:
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area=1.127 in sq【1 oz】including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size.
UNIT
V
V
A
W
A
W
A
°C/W
°C
A
°C
10-Jan-2010 Rev. A
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