SMS3404 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMS3404
5.8A, 30V, R_DS(ON) 30 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SMS3404 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. This device is suitable
for the use as a load switch or in PWM applications. The source
leads are separated to allow a Kelvin connection to the source,
which may be used to bypass the source inductance.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
R4
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (t≦10s)
ID
Pulsed Drain Current ¹
IDM
Thermal Resistance from Junction to Ambient
RθJA
Operating Junction and Storage Temperature
TJ, TSTG
Notes:
1. Repetitive rating : Pulse width is limited by the maximum junction temperature.
Rating
30
±20
5.8
30
357
150, -55~150
Unit
V
V
A
A
°C / W
°C
http://www.SeCoSGmbH.com/
01-Dec-2015 Rev.A
Any changes of specification will not be informed individually.
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