SMS3400A_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMS3400A
5.8A , 30V , R_DS(ON) 32 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS3400A provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-23 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
R0_A
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Top View
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain Current (t≤10s)
Pulsed Drain Current ¹
VGS
±12
ID
5.8
IDM
30
Maximum Power Dissipation (t≤10s)
Thermal Resistance Junction-Ambient ²
PD
400
RθJA
313
Operating Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
A
A
mW
°C / W
°C
http://www.SeCoSGmbH.com/
06-Jan-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 3