SMS2333 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMS2333
-6A , -12V , R_DS(ON) 28 mΩ
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2333 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-23 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
S33
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.17
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.35 0.65
0.08 0.20
0.6 REF.
0.95 BSC.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
1
3
2
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current (t=300µs)
Maximum Power Dissipation ²
Maximum Power Dissipation ¹
Thermal Resistance Junction-Ambient ²
Thermal Resistance Junction-Ambient ¹
VDS
VGS
ID
IDM
PD
RθJA
-12
±8
-6
-20
0.35
1.1
357
113
Operating Junction & Storage Temperature
TJ, TSTG
150, -55~150
Note：
1. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side.
2. Device mounted on no heat sink.
Unit
V
V
A
A
W
°C / W
°C
http://www.SeCoSGmbH.com/
27-Jun-2014 Rev.A
Any changes of specification will not be informed individually.
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