SMS2312_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMS2312
5A , 20V , R_DS(ON) 32 m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2312 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-23 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
 Lower Gate Charge
 Simple Drive Requirement
 Fast Switching Characteristic
MARKING
S12
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Top View
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain Current (t≤5s)
I_D
5
Pulsed Drain Current
I_DM
20
Maximum Power Dissipation (t≤5s)
P_D
0.35
Thermal Resistance Junction-Ambient
R_θJA
357
Operating Junction & Storage Temperature
T_J, T_STG
150, -55~150
Unit
V
V
A
A
mW
°C / W
°C
http://www.SeCoSGmbH.com/
25-Nov-2014 Rev.B
Any changes of specification will not be informed individually.
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