SMS2301R Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET

Elektronische Bauelemente
SMS2301R
-3A, -20V, R_DS(ON) 110 mΩ
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The device uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltage as low as 2.5V. This device is suitable for the use
as a load switch or in PWM applications
FEATURES
High power and current handing capability
Lead free product is available
Surface mount package
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
APPLICATIONS
PWM applications
Load switch
Power management
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.17
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.5 Typ.
0.08 0.20
0.6 REF.
0.95 BSC.
MARKING
2301
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
1
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current ¹
IDM
Maximum Power Dissipation
PD
Thermal Resistance from Junction to Ambient ²
RθJA
Junction and Storage Temperature Range
TJ, TSTG
Rating
-20
±12
-3
-10
1
125
-55~150
Unit
V
V
A
A
W
°C/W
°C
http://www.SeCoSGmbH.com/
24-May-2016 Rev. A
Any changes of specification will not be informed individually.
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