SMS2301 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMS2301
-3.1A , -20V , R_DS(ON) 75mΩ
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2301 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide Excellent R_DS(ON) and gate charge for
most of the small power switching and load switch
applications.
The SMS2301 meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology
Super low Gate Charge
Green Device Available
MARKING
S1
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.95
1.20 1.7
0.89 1.3
1.70 2.3
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.18
0.55 REF.
0.08 0.20
0.6 REF.
0.95 BSC.
1
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Gate-Source Voltage
VGS
Continuous Drain Current ¹, VGS@ -4.5V
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Total Power Dissipation ¹
TA=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
t≦5sec
Thermal Resistance from Junction to Ambient ¹
Steady State
RθJA
Thermal Resistance from Junction to Ambient
Rating
-20
±12
-3.1
-2.5
-15.5
1
150, -55~150
125
250
300
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
01-Mar-2017 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4