SMS2020 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel MOSFET

Elektronische Bauelemente
SMS2020
830mA, 20V
N-Channel MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS2020 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent R_{DS (ON)}with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
MECHANICAL DATA
 Trench Technology
 Supper high density cell design
 Excellent ON resistance
 Extremely Low Threshold Voltage
APPLICATION
 DC-DC converter circuit
 Load Switch
DEVICE MARKING:
W28
 = Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current ¹
Power Dissipation ¹
Continuous Drain Current ²
Power Dissipation ²
Pulsed Drain Current ³
T_A= 25°C
T_A= 70°C
T_A= 25°C
T_A= 70°C
T_A= 25°C
T_A= 70°C
T_A= 25°C
T_A= 70°C
Maximum Junction-to-Lead
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D
P_D
I_D
P_D
I_DM
R_θJL
T_J, T_STG
Rating
10S
Steady State
20
±6
0.9
0.83
0.72
0.66
0.38
0.32
0.24
0.2
0.79
0.71
0.63
0.57
0.29
0.24
0.19
0.15
1.4
260
150, -55~150
Unit
V
V
A
W
A
W
A
°C / W
°C
http://www.SeCoSGmbH.com/
21-May-2013 Rev. B
Any changes of specification will not be informed individually.
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