SMS2009E Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMS2009E
0.9A , 20V , R_{DS(O )} 350mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS2009E is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
FEATURES
Reliable and Rugged
Green Device Available
ESD Protection
MARKING
W28
= Date Code
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.95
1.20 1.7
0.89 1.3
1.70 2.3
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.18
0.55 REF.
0.08 0.20
0.6 REF.
0.95 BSC.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
10s
Steady state
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±12
Continuous Drain Current ¹,VGS=4.5V
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
0.9
0.8
0.72
0.64
1.8
Power Dissipation
TA=25°C
PD
0.38
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
-55~150
Thermal Resistance Junction-ambient ¹
t≦10s , 325
RθJA
Steady state , 385
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case¹
RθJA
525
RθJC
300
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Apr-2017 Rev. A
Any changes of specification will not be informed individually.
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