SMS123 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMS123
0.17A, 100V, RDS(ON) 6Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS123 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit
Load Switch
MARKING
B123
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
1
2
K
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.17
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.35 0.65
0.08 0.20
0.6 REF.
0.95 BSC.
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
VDS
Gate – Source Voltage
VGS
Continuous Drain Current ¹
ID
Pulsed Drain Current(tp=10µs)
IDM
Continuous Source-Drain Diode Current
IS
Power Dissipation
Thermal Resistance from Junction to Ambient ¹
Lead Temperature for Soldering Purposes
(1/8’’ from case for 10s)
Operating Junction & Storage Temperature Range
PD
RθJA
TL
TJ, TSTG
http://www.SeCoSGmbH.com/
28-Apr-2017 Rev. C
Rating
100
±20
0.17
0.68
0.17
0.35
357
260
150, -55~150
Unit
V
V
A
A
A
W
°C / W
°C
°C
Any changes of specification will not be informed individually.
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