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SMPB1060L Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Low VF Planar MOS Barrier Schottky Rectifier
Elektronische Bauelemente
SMPB1060L
Voltage 60V,10.0 Amp
Low VF Planar MOS Barrier Schottky Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen free
FEATURES
Planar MOS Schottky technology
Low forward voltage drop
High current capability
High reliability
High surge current capability
Epitaxial construction
TO-277B
MECHANICAL DATA
Case: TO-277B molded plastic body
Polarity: Color band denotes cathode end
Mounting position: ANY
PACKAGE INFORMATION
Package
MPQ
TO-277B
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.60
0.90 1.10
5.70 5.90
1.80 1.95
0.75 0.85
3.45 3.60
REF.
G
H
I
J
K
Millimeter
Min. Max.
0.85 0.95
3.90 4.10
0.25 REF.
1.75 1.85
2.95 3.05
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Rating
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms single half sine-wave
Voltage Rate of Chance (Rated VR)
Typical Thermal Resistance
Operating and Storage Temperature Range
VRRM
VRSM
VDC
IF
IFSM
dv/dt
RθJC
TJ,TSTG
60
60
60
10
150
10000
2
-40~150
Unit
V
V
V
A
A
V / µs
°C /W
°C
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Typ.
0.38
Maximum Instantaneous Forward
Voltage
0.44
VF
0.56
0.54
Maximum DC Reverse Current
at Rated DC Blocking Voltage 2
-
IR
-
Typical Junction Capacitance 1
CJ
320
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Pulse Test:Pulse Width = 300 µs, Duty Cycle ≦ 2.0%.
Max.
0.41
0.49
0.6
-
0.3
15
-
Unit
V
mA
pF
Test Condition
IF = 3A, TJ = 25°C
IF = 5A, TJ = 25°C
IF = 10A, TJ = 25°C
IF = 10A, TJ = 125°C
TJ=25°C
TJ=100°C
http://www.SeCoSGmbH.com/
28-May-2014 Rev. A
Any changes of specification will not be informed individually.
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