SMG702 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG702
500mA, 60V,RDS(ON) 4.5
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
Description
L
The SMG702 is universally used for all commercial
industrial surface mount application.
S
3
Top View
2
1
B
Marking : 702-
D
D
G
C
G
H
S
Absolute Maximum Ratings at TA = 25 ^oC
Drain
Gate
Source
Parameter
Symbol
J
K
Ratings
Drain-Source Voltage
VDS
60
Gate-Source Voltage
- Continuous
- Non-repetitive (tp
50us)
VGS
VGSM
±20
±40
Continuous Drain Current
ID
500
Pulsed Drain Current (Pulse width 300us, dutycycle 2%)
IDM
800
Total Power Dissipation
PD
225
Thermal Resistance,Junction-to-Ambient
RthJA
556
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
Electrical Characteristics( Tj = 25^oC Unless otherwise specified)
Parameter
Symbol
Min. Typ. Max. Unit
SC-59
Dim Min Max
A
2.70 3.10
B
1.40 1.60
C
1.00 1.30
D
0.35 0.50
G
1.70 2.10
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
0.85 1.15
S
2.40 2.80
All Dimension in mm
Unit
V
V
V
mA
mA
mW
W / ^oC
o_C
Test Condition
Drain-Source Breakdown Voltage
Gat Thershold Voltage
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
BVDSS
VGS(th)
IGSS
IDSS
60
_
_
V
VGS=0V, ID=250uA
1
_
2.5
V
VDS=2.5V,ID =0.25mA
_
_
±100
nA
VGS=± 20V, VDS=0
_
_
1
uA
VDS=60V,VGS=0
On-State Drain Current
StaticDrain-Source On-Resistance
ID(ON)
500
_
_
mA
VDS=7.5V,VGS=10V
_
RDS(ON)
_
_
5
_
4.5
ID =50mA,VGS=5V
ID =500mA, VGS=10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
_
_
50
VGS=0V
_
_
25
pF
VDS=25V
f=1.0MHz
_
_
5
Forward Transconductance
Gfs
80
_
_
mS
VDS>2 VDS(ON), I_D=200mA
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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