SMG2398N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
SMG2398N
2.2 A, 60 V, R_DS(ON) 194 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low R_DS(on) assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are power switch, power management in portable and battery-
powered products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low gate charge
 Fast switching
 Miniature SC-59 surface mount package saves board space.
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
PRODUCT SUMMARY
SMG2398N
V_DS(V)
60
R_DS(on) (m
194@V_GS= 10V
273@V_GS= 4.5V
I_D(A)
2.2
1.8
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
Operating Junction and Storage Temperature Range
I_D @ T_A=25°C
I_D @ T_A=70°C
P_D @ T_A=25°C
P_D @ T_A=70°C
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
Tj, Tstg
Ratings
Maximum
60
±20
2.2
1.7
±15
1.7
1.3
0.8
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction to Ambient ¹
Notes
t ≦ 5 sec
Steady State
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
R_JA
Maximum
100
166
Unit
V
V
A
A
A
A
W
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
25-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
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