SMG2390N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
SMG2390N
N-Channel Enhancement Mode Mos.FET
1.1 A, 150 V, R_DS(ON) 0.700 
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density
trench process to provide Low R_DS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SC-59 saves
board space.
 Fast switching speed.
 High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
V_DS(V)
150
R_DS(on) (
0.700@V_GS= 10V
1.200@V_GS= 5.5V
I_D(A)
1.1
0.8
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
Tj, Tstg
Ratings
Maximum
150
±20
1.1
±10
1.1
1.30
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient ^a
Notes
t ≦ 10 sec
Steady State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_JA
Typ Max
93
110
130
150
Unit
V
V
A
A
A
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
20-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
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