SMG2340N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
SMG2340N
5.2 A, 40 V, R_DS(ON) 43 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low R_DS(on) and ensure
minimal power loss and heat dissipation. Typical applications
are DC-DC converters and power management in portable and
battery-powered products such as computers, printer , PCMCIA
cards, cellular and cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Low thermal impedance copper leadframe SC-59
saves board Space.
 Fast switching speed.
 High performance trench technology.
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
1.00
Max.
3.10
3.00
1.70
1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
1
3
2
ABSOLUTE MAXIMUM RATINGS(T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ¹
I_D @ T_A=25°C
I_D @ T_A=70°C
I_D
Pulsed Drain Current ²
I_DM
Continuous Source Current (Diode Conduction) ¹
I_S
Power Dissipation ¹
P_D @ T_A=25°C
P_D @ T_A=70°C
P_D
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Data
Maximum Junction to Ambient ¹
t ≦ 5 sec
Steady State
R_JA
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings
40
±20
5.2
4.1
30
1.6
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
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