SMG2330N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2330N
5.2A, 30V, R_DS(ON) 32mΩ
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High
Cell Density process. Low R_DS(on) assures minimal power
loss and conserves energy, making this device ideal for
use in power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable
and battery-powered products such as computers, printers,
battery charger, telecommunication power system, and
telephones power system.
FEATURES
Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT-23 Surface Mount Package Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter applications
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
SC-59
A
L
3
Top View C B
1
2
K
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDSS
Continuous Gate-Source Voltage
VGSS
Continuous Drain Current¹
TA=25°C
ID
TA=70°C
Pulsed Drain Currentb²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipationa¹
TA=25°C
PD
TA=70°C
Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient¹
t≦5 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature
RθJA
http://www.SeCoSGmbH.com/
4-Jul-2011 Rev. A
Rating
30
±20
5.2
4.1
30
1.6
1.3
0.8
-55~150
100
166
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
Any changes of specification will not be informed individually.
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