SMG138K Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG138K
640mA, 50V,RDS(ON) 2
N-Channel Enhancement Mode Power Mos.FET
Description
The SMG138K utilized advanced processing
techniques to achieve the lowest possible on-resistance ^S
extremely efficient and cost-effectiveness device.
The SMG138K is universally used for all commercial
industrial application
A
L
3
Top View
B
2
1
D
G
C
Features
* Simple drive Requirement
* Small package outline
* RoHS Compliant Product
Marking : 138E
H
Drain
Gate
Source
G
J
K
D
SC-59
Dim Min Max
A
2.70 3.10
B
1.40 1.60
C
1.00 1.30
D
0.35 0.50
G
1.70 2.10
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
0.85 1.15
S
2.40 2.80
All Dimension in mm
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,³ VGS@4.5V
Continuous Drain Current,³VGS@4.5V
Pulsed Drain Current ^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
S
Ratings
50
±20
640
500
950
1.38
0.01
-55~+150
Unit
V
V
mA
mA
mA
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient ³
Symbol
Rthj-a
Ratings
90
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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