SMBT882SS Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon Epitaxial Planar Transistor

Elektronische Bauelemente
SMBT882SS
NPN Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SMBT882SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and
voltage regulator.
FEATURES
 High current output up to 3A
 Low saturation voltage
PACKAGE DIMENSIONS
A
L
3
S
Top View
B
2
1
D
G
C
J
H
K
COLLECTOR
BASE
EMITTER
SC-59
Dim Min Max
A 2.70 3.10
B
1.30 1.70
C
1.00 1.30
D
0.35 0.50
G
1.90 REF.
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
1.25 1.65
S
2.25 3.00
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pd
T_J, T_STG
Ratings
40
30
5.0
3.0
750
+150, -55 ~ +150
Unit
V
V
V
A
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
5.0
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-
-
90
45
Max.
-
-
-
1.0
1.0
0.5
2.0
-
500
-
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
I_C=100uA, I_E = 0
I_C=1mA, I_B=0
I_E=10uA, I_C=0
V_CB=30V, I_E= 0
V_EB=3V, I_C= 0
I_C=2A, I_B=200mA
I_C=2A, I_B=200mA
V_CE=2V, I_C=20mA
V_CE=2V, I_C=1 A
V_CE=5V, I_C=100mA, f=100MHz
V_CB=10V, f=1MHz
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF h_FE2
Rank
Q
Range
100 - 200
P
160 - 320
E
200 - 500
01-June-2002 Rev. A
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