SM820C_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 8.0 AMP Surface Mount Schottky Barrier Rectifiers

Elektronische Bauelemente
SM820C THRU SM8100C
VOLTAGE 20V ~ 100V
8.0 AMP Surface Mount Schottky Barrier Rectifiers
A suffix of "-C" specifies halogen & lead-free
DO-214AB (SMC)
FEATURES
. Low forward voltage drop
. High current capability
. High reliability
. High surge current capability
. Epitaxial construction
. RoHS Compliant Product
MECHANICAL DATA
. Case: Molded plastic
. Epoxy: UL 94V-0 rate flame retardant
. Metallurgically bonded construction
. Polarity: Color band denotes cathode end
. Mounting position: Any
. Weight: 1.10 grams
.124(3.15)
.108(2.75)
.103(2.62)
.079(2.00)
.050(1.27)
.030(0.76)
.280(7.11)
.260(6.60)
.245(6.22)
.220(5.59)
.012(0.31)
.006(0.15)
(..020083)MAX.
.320(8.13)
.305(7.75)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 ^OC ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
SM820C
SM840C
SM860C
Maximum Recurrent Peak Reverse Voltage
20
40
60
Working Peak Reverse Voltage
20
40
60
Maximum DC Blocking Voltage
20
40
60
Maximum Average Forward Rectified Current,
See Fig. 1
8.0
Peak Forward Surge Current, 8.3 ms Single Half
Sine-Wave Superimposed on Rated Load
150
(JEDEC Method)
Maximum Instantaneous Forward Voltage at 8.0A
0.55
0.65
Maximum DC Reverse Current Ta=25 C^O
0.3
0.15
At Rated DC Blocking Voltage Ta=100^OC
45
22.5
Typical Junction Capacitance (Note 1)
380
Typical Thermal Resistance RșJC (Note 2)
10
Operating Temperature Range TJ
-50 ~ +150
Storage Temperature Range TSTG
-65 ~ +175
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient Vertical PC Board Mounting 0.5"(12.7mm) Lead Length.
SM8100C
100
100
100
0.83
0.05
7.5
UNITS
V
V
V
A
A
V
mA
pF
к /W
к
к
http://www.SeCoSGmbH.com/
04-Jul -2007 Rev. B
Any changing of specification will not be informed individual
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