SM520C Datasheet, PDF (1/2 Pages) UNIOHM CORPORATION – 5.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Elektronische Bauelemente
SM520C THRU SM5100C
VOLTAGE 20V ~ 100V
5.0AMP Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
. RoHS Compliant Product
. Low forward voltage drop
. High current capability
. High reliability
. High surge current capability
. Epitaxial construction
MECHANICAL DATA
. Case: Molded plastic
. Epoxy: UL 94V-0 rate flame retardant
. Metallurgically bonded construction
. Polarity: Color band denotes cathode end
. Mounting position: Any
. Weight: 1.10 grams
DO-214AB ( SMC )
.124(3.15)
.108(2.75)
.103(2.62)
.079(2.00)
.050(1.27)
.030(0.76)
.280(7.11)
.260(6.60)
.245(6.22)
.220(5.59)
.012(0.31)
.006(0.15)
(..020083)MA ^{X .}
.320(8.13)
.305(7.75)
Dimens ions in inches and (millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 ^oC ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
SM520C
SM540C
SM560C
Maximum Recurrent Peak Reverse Voltage
20
40
60
Working Peak Reverse Voltage
20
40
60
Maximum DC Blocking Voltage
20
40
60
Maximum Average Forward Rectified Current,
See Fig. 1
5.0
A
Peak Forward Surge Current, 8.3 ms single half
Sine-wave superimposed on rated load
125
A
(JEDEC method)
Maximum Instantaneous Forward Voltage at 5.0A
0.55
0.65
Maximum DC Reverse Current Ta=25
0.2
0.1
At Rated DC Blocking Voltage Ta=100
30
15
Typical Junction Capacitance (Note 1)
380
Typical Thermal Resistance RșJC (Note 2)
10
Operating Temperature Range TJ
-50 ~ +150
Storage Temperature Range TSTG
-65 ~ +175
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient Vertical PC Board Mounting 0.5”(12.7mm) Lead Length.
SM5100C
100
100
100
0.83
0.05
7.5
UNITS
V
V
V
V
mA
pF
к /W
к
к
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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