SM4001AM Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Voltage 50 ~ 1000 V 1.0Amp Surface Mount Silicon Rectifiers

Elektronische Bauelemente
SM4001AM~SM4007AM
Voltage 50 ~ 1000 V
1.0Amp Surface Mount Silicon Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low profile package
Glass Passivated Chip Junction
Low reverse current
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case : SMAM
Terminals: Solderable per MIL-STD-750, Method 2026
Weight: 27 mgram (Approximate)
SMAM
MARKING
Part Number
SM4001AM
SM4002AM
SM4003AM
SM4004AM
Marking Code
S1M
S1M
S1M
S1M
Part Number
SM4005AM
SM4006AM
SM4007AM
Marking Code
S1M
S1M
S1M
REF.
A
B
C
Millimeter
Min. Max.
3.30 3.70
2.40 2.70
4.40 4.90
REF.
D
E
F
Millimeter
Min. Max.
0.80 1.20
1.30 1.60
0.90 1.10
PACKAGE INFORMATION
Package
MPQ
SMAM
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
SM
4001AM
SM
4002AM
Part Number
SM
SM
SM
4003AM 4004AM 4005AM
SM
4006AM
Maximum Repetitive Peak Reverse Voltage VRRM
50
100
200
400
600
800
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified
Current
IF
Peak Forward Surge Current, 8.3ms single
half sine-wave superimposed on rated load
IFSM
Maximum Instantaneous Forward Voltage
IF=1A @ 25°C
VF
Maximum DC Reverse Current ^TA=25°C
at Rated DC Blocking Voltage _TA=125°C
IR
Typical Junction Capacitance¹
CJ
Typical Thermal Resistance ²
RθJL
Typical Thermal Resistance ²
RθJC
50
100
200
400
600
800
1
30
1.1
5
50
9
22
30
Operating & Storage Temperature
TJ,TSTG
Notes:
1. Measured at 1 MHz and applied reverse voltage of 4 V D.C
2. P.C.B. mounted with 10 X 10 x 0.2 mm copper pad areas.
-55~ 150
SM
4007AM
1000
700
1000
Unit
V
V
V
A
A
V
µA
pF
°C/W
°C/W
°C
http://www.SeCoSGmbH.com/
26-May-2017 Rev. B
Any changes of specification will not be informed individually.
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